Impact of Work Function Tunability on Thermal and RF Performance of P-type Window based Junctionless Transistor

The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals distinct work functions and hence, they show incompatibility while tailoring threshold the device. In such a scenario, bimetallic stacked can be promising candidate present wide range tunable required nano-regime transistors. This paper explores electronic phenomena occurring at metal-metal interface impact Platinum (Pt)/Titanium (Ti) gate-based function tunability on RF thermal performances p-type window-based Silicon Insulator Junctionless Transistor (SOI JLT) using numerical simulator SILVACO ATLAS. parameters considered performance evaluation are ON-state current (I_{ON}), OFF-state (I_{OFF}), I_{ON}/I_{OFF} ratio, transconductance (g_m),\linebreak cutoff frequency (f_T), Transconductance Frequency Product (TFP), Intrinsic Gate Delay (IGD), intrinsic gain (A_V), Global Device Temperature (GDT). g_m, f_T, TFP, A_V GDT improve modified over conventional in ON state higher function, IGD improves lower function. improvements 11.7% 2.21% obtained maximum g_m respectively, transistor conventional. findings suggest that SOIJLT is better option than low-power application.